BSH111 | NXP Semiconductors 335 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
Category:
MOSFETs
Brand:
NXP Semiconductors
335 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
Stock:
On request
Product Details
PDF Datasheet
Technical Docs
Description: 335 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
Technical Parameters
| Configuration | Single |
| Continuous Drain Current (ID) | 100 mA ~ 500 mA |
| Data Tier | Family Level |
| Drain-Source Voltage (VDS) | -100 V |
| FET Type | P-Channel MOSFET |
| Gate Charge (Qg) | Low |
| Gate Threshold Voltage (VGS(th)) | 1.5 ~ 2.5 V |
| Input Capacitance (Ciss) | Low |
| Lead Free | Yes |
| Mounting | Surface Mount |
| Mounting Type | SMD |
| Operating Temperature | -55 ~ +150 °C |
| Package / Case | SOT-23 |
| Packaging | Tape & Reel |
| Product Type | Multilayer Ceramic Capacitor |
| RoHS | Compliant |
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
No datasheet available yet. Submit an inquiry and we'll provide it within 30 minutes.
