BSC12DN20NS3GATMA1 | Infineon Technologies MOSFET N-CH 200V 11.3A 8TDSON
Category:
MOSFETs
Brand:
Infineon Technologies
MOSFET N-CH 200V 11.3A 8TDSON
Stock:
On request
Product Details
PDF Datasheet
Technical Docs
Description: MOSFET N-CH 200V 11.3A 8TDSON
Technical Parameters
| Continuous Drain Current (ID) | Up to 30 A class |
| Data Tier | Family Level |
| Drain-Source Voltage (VDS) | 20 V |
| FET Type | N-Channel MOSFET |
| Gate Charge (Qg) | Low |
| Gate Threshold Voltage (VGS(th)) | Logic level / standard |
| Input Capacitance (Ciss) | Low |
| Logic Family | Standard CMOS |
| Mounting | Surface Mount |
| Mounting Type | SMD |
| On-Resistance (RDS(on)) | Low RDS(on) class |
| Operating Temperature | -55 ~ +175 °C |
| Output Type | Push-Pull / TTL |
| Package / Case | PG-TDSON-8 (DSON) |
| Power Dissipation (Pd) | High density |
| Product Type | Multilayer Ceramic Capacitor |
| Technology | OptiMOS |
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
Datasheet not available online yet.
Can't find the datasheet you need? Contact our sourcing team and we'll help locate the official documentation from the manufacturer or our supply channels.
Request now →
