APT1001RBVRG Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, by Microchip Technology Inc

APT1001RBVRG | Microchip Technology Inc Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

Brand: Microchip Technology Inc
Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: Power Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,

Technical Parameters

BrandMicrochip Technology Inc
Data TierFamily Level
Operating Temperature-40 to +85 C
Product TypeIntegrated Circuit
RoHSCompliant
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
No datasheet available yet. Submit an inquiry and we'll provide it within 30 minutes.