6N10G-AA3-R Power Field-Effect Transistor, 6.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, by UTC

6N10G-AA3-R | UTC Power Field-Effect Transistor, 6.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Name: 6N10G-AA3-R
Brand: UTC
SKU: 6N10G-AA3-R

Brand: UTC

Power Field-Effect Transistor, 6.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Stock: On request

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Description: Power Field-Effect Transistor, 6.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Technical Parameters

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6N10G-AA3-R Application and Selection Guide

6N10G-AA3-R Model and Manufacturer Information

6N10G-AA3-R, a manufactured by UTC: 6N10G-AA3-R helps you confirm the specific model, while UTC helps you confirm the product source. If you are selecting a part, you can first check whether 6N10G-AA3-R meets your requirements, then check whether UTC matches your expectations, and then refer to Power Field-Effect Transistor, 6.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, for further evaluation.

6N10G-AA3-R Product Parameters and Description

The main parameters of UTC's product 6N10G-AA3-R include Power Field-Effect Transistor, 6.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,. This is a produced by UTC, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

6N10G-AA3-R Application and Selection Reference

UTC's product 6N10G-AA3-R has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, 6N10G-AA3-R is a solution worth considering, and manufacturer UTC provides long-term supply program support for this product, which helps ensure supply continuity during mass production.