6MBI150VB-120-50 Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, COMPACT PACKAGE-35 by Fuji Electric Co Ltd

6MBI150VB-120-50 | Fuji Electric Co Ltd Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, COMPACT PACKAGE-35

Brand: Fuji Electric Co Ltd
Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, COMPACT PACKAGE-35
Stock: On request

Product Details

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Description: Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, COMPACT PACKAGE-35

Technical Parameters

BrandFuji Electric
Data TierGeneral Description
Mounting TypeThrough Hole / SMD
Product TypePower Semiconductor
RoHSCompliant
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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