2SK2158 | Renesas Electronics America N沟道 漏源电压(Vdss)：50V 连续漏极电流(Id)：200mA 导通电阻(RDS(on)@Vgs,Id)：3.5Ω@5V,200mA

2SK2158 Application and Selection Guide

2SK2158 Model and Manufacturer Information

2SK2158, a MOSFETs manufactured by Renesas: 2SK2158 helps you confirm the specific model, while Renesas helps you confirm the product source. If you are selecting a part, you can first check whether 2SK2158 meets your requirements, then check whether Renesas matches your expectations, and then refer to N沟道 漏源电压(Vdss)：50V 连续漏极电流(Id)：200mA 导通电阻(RDS(on)@Vgs,Id)：3.5Ω@5V,200mA for further evaluation.

2SK2158 Product Parameters and Description

The main parameters of Renesas's MOSFETs product 2SK2158 include N沟道 漏源电压(Vdss)：50V 连续漏极电流(Id)：200mA 导通电阻(RDS(on)@Vgs,Id)：3.5Ω@5V,200mA. This is a MOSFETs produced by Renesas, and it also offers good applicability in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices.

2SK2158 Application and Selection Reference

Renesas's MOSFETs product 2SK2158 has a relatively wide range of applications in embedded systems, common 3C electronics, automotive electronics, electronic devices, and IoT devices. Overall, 2SK2158 is a MOSFETs solution worth considering, and manufacturer Renesas provides long-term supply program support for this product, which helps ensure supply continuity during mass production.

Recommended Part Numbers for 2SK2158

Designers looking for 2SK2158 recommended parts can evaluate the following options. 2SK2158 selection decisions should verify parameters, tolerance and packaging against the original design bill of materials.

EZKEY can provide 2SK2158 recommended part comparison data and engineering samples for evaluation.