2N7002T-7-F 类型:N沟道 漏源电压(Vdss):60V 连续漏极电流(Id):115mA 功率(Pd):150mW by Diodes Inc

2N7002T-7-F | Diodes Inc 类型:N沟道 漏源电压(Vdss):60V 连续漏极电流(Id):115mA 功率(Pd):150mW

Category: MOSFETs
Brand: Diodes Inc
类型:N沟道 漏源电压(Vdss):60V 连续漏极电流(Id):115mA 功率(Pd):150mW
Quantity: 610 pcs
Unit Price: USD 0.00

Product Details

PDF Datasheet

Technical Docs

Description: 类型:N沟道 漏源电压(Vdss):60V 连续漏极电流(Id):115mA 功率(Pd):150mW

Technical Parameters

Data TierFamily Level
ID300 mA
Mounting TypeSurface Mount
Operating Temperature-55 to +150 C
Package / CaseSOT-23
RoHSCompliant
Transistor TypeN-Channel MOSFET
VDS60 V
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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