2N7002K-T1-GE3 类型:N沟道 漏源电压(Vdss):60V 连续漏极电流(Id):300mA 功率(Pd):350mW by Vishay Dale

2N7002K-T1-GE3 | Vishay Dale 类型:N沟道 漏源电压(Vdss):60V 连续漏极电流(Id):300mA 功率(Pd):350mW

Category: MOSFETs
Brand: Vishay Dale
类型:N沟道 漏源电压(Vdss):60V 连续漏极电流(Id):300mA 功率(Pd):350mW
Stock: On request

Product Details

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Technical Docs

Description: 类型:N沟道 漏源电压(Vdss):60V 连续漏极电流(Id):300mA 功率(Pd):350mW

Technical Parameters

Data TierFamily Level
ID300 mA
Mounting TypeSurface Mount
Operating Temperature-55 to +150 C
Package / CaseSOT-23
RoHSCompliant
Transistor TypeN-Channel MOSFET
VDS60 V
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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