1N5401G A0G DIODE GEN PURP 100V 3A DO201AD by Taiwan Semiconductor Corporation

1N5401G A0G | Taiwan Semiconductor Corporation DIODE GEN PURP 100V 3A DO201AD

Category: Rectifiers
Brand: Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
Stock: On request

Product Details

PDF Datasheet

Technical Docs

Description: DIODE GEN PURP 100V 3A DO201AD

Technical Parameters

BrandTaiwan Semiconductor Corporation
Data TierFamily Level
Diode ConfigurationSingle
ECCNEAR99
Forward Current3 A
Forward Voltage1 V (Max)
Halogen FreeYes
Mounting TypeThrough Hole
Operating Temperature-55 to +150 C
PackagingAmmo Pack
Peak Surge Current200 A
Power Dissipation6.25 W
Product TypeRectifier Diode
REACHCompliant
Repetitive Peak Reverse Voltage100 V
Reverse Recovery TimeStandard Recovery
Reverse Voltage100 V
RoHSCompliant
Series1N5401
Standard Packaging: Standard packaging refers to the minimum packaging quantity obtained from the manufacturer/distributor. Therefore, the minimum order quantity may be less than the manufacturer's standard packaging quantity. When products are broken down into smaller quantities, the packaging type (i.e., reel, tube, tray) may change, subject to actual packaging delivery.
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